型号
- 型号
- 关键词
| 型号 | IS61C67-25N | IS61C67-L20N | IS61C67-L25N | IS61C67-15N | IS61C67 | IS61C67-20N | IS61C67-L15N |
|---|---|---|---|---|---|---|---|
| 描述 | 16k X 1 high speed cmos static ram | 16k X 1 high speed cmos static ram | 16k X 1 high speed cmos static ram | 16k X 1 high speed cmos static ram | 16k X 1 high speed cmos static ram | 16k X 1 high speed cmos static ram | 16k X 1 high speed cmos static ram |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | - | 不符合 | 不符合 |
| 包装说明 | DIP, DIP20,.3 | 0.300 INCH, PLASTIC, DIP-20 | 0.300 INCH, PLASTIC, DIP-20 | DIP, DIP20,.3 | - | 0.300 INCH, PLASTIC, DIP-20 | 0.300 INCH, PLASTIC, DIP-20 |
| Reach Compliance Code | not_compliant | unknown | unknown | not_compliant | - | unknown | unknown |
| 最长访问时间 | 25 ns | 20 ns | 25 ns | 15 ns | - | 20 ns | 15 ns |
| I/O 类型 | SEPARATE | SEPARATE | SEPARATE | SEPARATE | - | SEPARATE | SEPARATE |
| JESD-30 代码 | R-PDIP-T20 | R-PDIP-T20 | R-PDIP-T20 | R-PDIP-T20 | - | R-PDIP-T20 | R-PDIP-T20 |
| JESD-609代码 | e0 | e0 | e0 | e0 | - | e0 | e0 |
| 长度 | 25.527 mm | 25.527 mm | 25.527 mm | 25.527 mm | - | 25.527 mm | 25.527 mm |
| 内存密度 | 16384 bit | 16384 bit | 16384 bit | 16384 bit | - | 16384 bit | 16384 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | - | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 1 | 1 | 1 | 1 | - | 1 | 1 |
| 功能数量 | 1 | 1 | 1 | 1 | - | 1 | 1 |
| 端子数量 | 20 | 20 | 20 | 20 | - | 20 | 20 |
| 字数 | 16384 words | 16384 words | 16384 words | 16384 words | - | 16384 words | 16384 words |
| 字数代码 | 16000 | 16000 | 16000 | 16000 | - | 16000 | 16000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | - | 70 °C | 70 °C |
| 组织 | 16KX1 | 16KX1 | 16KX1 | 16KX1 | - | 16KX1 | 16KX1 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | - | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | DIP | DIP | DIP | - | DIP | DIP |
| 封装等效代码 | DIP20,.3 | DIP20,.3 | DIP20,.3 | DIP20,.3 | - | DIP20,.3 | DIP20,.3 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | - | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | - | PARALLEL | PARALLEL |
| 电源 | 5 V | 5 V | 5 V | 5 V | - | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified |
| 座面最大高度 | 4.572 mm | 4.572 mm | 4.572 mm | 4.572 mm | - | 4.572 mm | 4.572 mm |
| 最大待机电流 | 0.002 A | 0.0001 A | 0.0001 A | 0.004 A | - | 0.003 A | 0.0001 A |
| 最小待机电流 | 4.5 V | 2 V | 2 V | 4.5 V | - | 4.5 V | 2 V |
| 最大压摆率 | 0.075 mA | 0.085 mA | 0.075 mA | 0.1 mA | - | 0.085 mA | 0.1 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | - | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | - | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | - | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | - | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | - | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | - | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | - | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | - | DUAL | DUAL |
| 宽度 | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | - | 7.62 mm | 7.62 mm |
| 厂商名称 | - | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | - | - | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
| ECCN代码 | - | EAR99 | EAR99 | - | - | EAR99 | EAR99 |
